PART |
Description |
Maker |
SSTS20L60CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
SSTS20100 |
High Junction Temperature
|
Silikron Semiconductor ...
|
SSBR20100CTF SSBR20100CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
|
SSBD5L300A |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
SMA6J6.0A-TR SMA6J6.0CA-TR SMA6J6.5A-TR SMA6J6.5CA |
High junction temperature Transil
|
ST Microelectronics
|
SMA6F12AVCL SMA6F13A |
High junction temperature Transil
|
STMicroelectronics
|
LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
2SK710 E001574 SK710 |
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS) SILICON N CHANNEL JUNCTION TYPE From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
BCR12CM-12LB BCR12CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
BCR30AM-12LB BCR30AM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
BCR16CS-12LB BCR16CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|